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BTA12 B/C BTB12 B/C
STANDARD TRIACS
.HI .COMMUTATI .BTAFami
FEATURES DESCRIPTION
GH SURGE CURRENT CAPABILITY ON : (dV/dt)c > 5 V/s ly : INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734)
The BTA/BTB12 B/C triac family are high performance glass passivated PNPN devices. These parts are suitables for general purpose applications where high surge current capability is required. Application such as phase control and static switching on inductive or resistive load. ABSOLUTE RATINGS (limiting values)
Symbol IT(RMS) RMS on-state current (360 conduction angle) Non repetitive surge peak on-state current ( Tj initial = 25C ) I2t value Critical rate of rise of on-state current Gate supply : IG = 500mA diG/dt = 1A/s Parameter BTA BTB ITSM
A1 A2
G
TO220AB (Plastic)
Value Tc = 90 C Tc = 95 C tp = 8.3 ms tp = 10 ms 125 120 72 10 50 - 40 to + 150 - 40 to + 125 260 12
Unit A
A
I2t dI/dt
tp = 10 ms Repetitive F = 50 Hz Non Repetitive
A2s A/s
Tstg Tj Tl
Storage and operating junction temperature range Maximum lead temperature for soldering during 10 s at 4.5 mm from case Parameter 400
C C C
Symbol
BTA / BTB12-... B/C 600 600 700 700 800 800
Unit
VDRM VRRM
Repetitive peak off-state voltage Tj = 125 C
400
V
March 1995
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BTA12 B/C / BTB12 B/C
THERMAL RESISTANCES
Symbol Rth (j-a) Junction to ambient BTA BTB Rth (j-c) AC Junction to case for 360 conduction angle ( F= 50 Hz) BTA BTB Parameter Value 60 3.3 2.7 2.5 2.0 C/W Unit C/W C/W
Rth (j-c) DC Junction to case for DC
GATE CHARACTERISTICS (maximum values)
PG (AV) = 1W PGM = 10W (tp = 20 s) IGM = 4A (tp = 20 s) VGM = 16V (tp = 20 s).
ELECTRICAL CHARACTERISTICS
Symbol Test Conditions Quadrant B IGT VD=12V (DC) RL =33 Tj=25C I-II-III IV VGT VGD tgt IL VD=12V (DC) RL =33 Tj=25C Tj=110C Tj=25C Tj=25C I-II-III-IV I-II-III-IV I-II-III-IV I-III-IV II IH * VTM * IDRM IRRM dV/dt * IT= 500mA gate open ITM= 17A tp= 380s VDRM VRRM Rated Rated Tj=25C Tj=25C Tj=25C Tj=110C Tj=110C MAX MAX MAX MAX MIN 250 MAX MAX MAX MIN TYP TYP 40 70 50 1.5 0.01 0.5 100 V/s 50 100 1.5 0.2 2 20 35 25 mA V mA Suffix C 25 50 V V s mA mA Unit
VD=VDRM R L=3.3k VD=VDRM IG = 500mA dIG/dt = 3A/s IG=1.2 IGT
Linear slope up to VD =67%VDRM gate open (dI/dt)c = 5.3A/ms
(dV/dt)c *
Tj=110C
MIN
10
5
V/s
* For either polarity of electrode A2 voltage with reference to electrode A1.
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BTA12 B/C / BTB12 B/C
ORDERING INFORMATION
Package IT(RMS) A BTA (Insulated) 12 VDRM / VRRM V 400 600 700 800 BTB (Uninsulated) 400 600 700 800 B X X X X X X X X Sensitivity Specification C X X X X X X X X
Fig.1 : Maximum RMS power dissipation versus RMS on-state current (F=50Hz). (Curves are cut off by (dI/dt)c limitation)
Fig.2 : Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact (BTA).
P (W)
Tcase (o C)
P(W)
16 14 12 10 8 6 4 2 0 0 1
180 O
16
-85
Rth = 0 o C/W 2 o C/W 4 o C/W 6 o C/W
= 180 = 120 = 90 = 60 = 30
o o o o
o
14 12 10 8 6 4
-90 -95 -100 -105 -110 -115
I T(RMS) (A)
2 3 4 5 6 7 8 9 10 11 12
2 0 0 20
Tamb ( C)
o
-120 60 80 100 120 -125 140
40
Fig.3 : Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact (BTB).
P (W)
Tcase (o C) Rth = 0 o C/W 2 o C/W 4 o C/W 6 o C/W
Fig.4 : RMS on-state current versus case temperature.
16 14 12 10 8 6 4 2 0 0 20
Tamb ( C)
o
I T(RMS) (A)
14
-95 -100 -105 -110 -115 -120
12
BTA
BTB
10 8 6
= 180
o
4 2 0 0 Tcase ( C)
o
40
60
80
100
120
-125 140
10 20 30 40 50 60 70 80 90 100 110 120 130
3/5
BTA12 B/C / BTB12 B/C
Fig.5 : Relative variation of thermal impedance versus pulse duration. Fig.6 : Relative variation of gate trigger current and holding current versus junction temperature.
Zth/Rth 1
Zt h( j-c)
0.1
Zt h(j-a)
tp( s)
0.01 1E-3
1E-2
1E-1
1E +0
1 E +1
1 E +2 5 E +2
Fig.7 : Non Repetitive surge peak on-state current versus number of cycles.
Fig.8 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : t 10ms, and corresponding value of I2t.
Fig.9 : On-state characteristics (maximum values).
4/5
BTA12 B/C / BTB12 B/C
PACKAGE MECHANICAL DATA TO220AB Plastic
REF.
A G I D B
J H
F
O
P
L
C
M = N=
A B C D F G H I J L M N O P
DIMENSIONS Millimeters Inches Min. Max. Min. Max. 10.20 10.50 0.401 0.413 14.23 15.87 0.560 0.625 12.70 14.70 0.500 0.579 5.85 6.85 0.230 0.270 4.50 0.178 2.54 3.00 0.100 0.119 4.48 4.82 0.176 0.190 3.55 4.00 0.140 0.158 1.15 1.39 0.045 0.055 0.35 0.65 0.013 0.026 2.10 2.70 0.082 0.107 4.58 5.58 0.18 0.22 0.80 1.20 0.031 0.048 0.64 0.96 0.025 0.038
Cooling method : C Marking : type number Weight : 2.3 g Recommended torque value : 0.8 m.N. Maximum torque value : 1 m.N.
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-T HOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics.
(c) 1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
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